Composition-tunable 2D SnSe2(1-x)S2x alloys towards efficient bandgap engineering and high performance (opto) electronics
Composition-tunable 2D SnSe2(1-x)S2x alloys towards efficient bandgap engineering and high performance (opto) electronics
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成分可调的二维 SnSe2(1-x)S2x 合金可实现高效带隙工程和高性能（光电）电子产品
DOI：
10.1039/c6tc03751h
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发表时间：
2017
影响因子：
6.4
通讯作者：
Li Jingbo
中科院分区：
文献类型：
--
作者：
Wang Yan;Huang Le;Li Bo;Shang Jimin;Xia Congxin;Fan Chao;Deng Hui-Xiong;Wei Zhongming;Li Jingbo
有效的带隙工程是一个重要的战略，利用广泛关注的二维（2D）层状材料的多功能器件，如纳米电子，光电子和光子学。过渡金属二硫属化合物（TMD）的合金化是制备二维纳米结构半导体材料的一种有效方法。在这里，我们报告了一个系统的研究化学气相传输（CVT）生长的SnSe 2（1-x）S2 x合金的连续带隙范围从1.37 eV（SnSe 2）到2.27 eV（SnS 2）。二维SnSe 2（1-x）S2 x纳米片的载流子迁移率可以通过控制合金中的S成分从2.34 cm 2 V-1 s-1（SnS 2）调整到71.30 cm 2 V-1 s-1（SnSe 2）。此外，在光照下，SnSeS的载流子迁移率从10.34 cm 2 V-1 s-1增加到12.16 cm 2 V-1 s-1，显示出优异的光电性能。我们的研究表明，SnSe 2（1−x）S2 x纳米片是下一代纳米电子学和光电子学应用的高质量2D材料。
Efficient bandgap engineering is a significant strategy for the utilization of widely concerned two-dimensional (2D) layered materials in versatile devices such as nanoelectronics, optoelectronics, and photonics. Alloying transition-metal dichalcogenides (TMDs) with different components has been proved as a very effective way to get 2D nanostructured semiconductors with artificially designed tunable bandgaps. Here we report a systematically study of chemical vapor transport (CVT) grown SnSe2(1−x)S2x alloys with continuously bandgaps ranging from 1.37 eV (SnSe2) to 2.27 eV (SnS2). The carrier mobility of 2D SnSe2(1−x)S2x nanosheets can be tuned from 2.34 cm2 V−1 s−1 (SnS2) to 71.30 cm2 V−1 s−1 (SnSe2) by controlling the S composition in the alloy. Furthermore, the carrier mobility of SnSeS increase from 10.34 to 12.16 cm2 V−1 s−1 under illumination, showing excellent optoelectronic properties. Our study suggests that SnSe2(1−x)S2x nanosheets is a highly qualified 2D materials for next-generation nanoelectronics and optoelectronics application.