Zinc oxide thin film doped with Al2O3, TiO2 and V2O5 as sensitive sensor for trimethylamine gas
Zinc oxide thin film doped with Al2O3, TiO2 and V2O5 as sensitive sensor for trimethylamine gas
复制标题
DOI:
10.1016/s0925-4005(97)00324-9
复制
发表时间:
1998-02
影响因子:
8.4
通讯作者:
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
中科院分区:
文献类型:
--
作者:
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
To obtain a sensitive sensor for TMA gas, ZnO-based films were fabricated by a rf magnetron sputtering method using targets added with Al2O3, TiO2, or V2O5. The films were heat-treated at a temperature between 400°C and 800°C for 60 min in oxygen. It was found that the sensitivity and selectivity of the films for TMA gas at 300°C increased by doping with 4.0 wt% Al2O3, 1.0 wt% TiO2and 0.2 wt% V2O5. The sensor with the doped film 120 nm thick and annealed at 700°C for 60 min in oxygen exhibited fairly excellent sensitivity and selectivity to TMA, and electrical stability. Upon exposure to odors from a mackerel, the sensor using this film could trace well its deterioration during storage.