Zinc oxide thin film doped with Al2O3, TiO2 and V2O5 as sensitive sensor for trimethylamine gas

Zinc oxide thin film doped with Al2O3, TiO2 and V2O5 as sensitive sensor for trimethylamine gas
复制标题

DOI:
10.1016/s0925-4005(97)00324-9
复制
发表时间:
1998-02
影响因子:
8.4
通讯作者:
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon
中科院分区:
化学1区
文献类型:
--
作者:
Sung-hyun Park;J. Ryu;Hyek-Hwan Choi;T. Kwon

文献摘要

被引文献

相似文献

为了获得一个敏感的传感器TMA气体,ZnO基薄膜的制备通过射频磁控溅射法使用添加有Al2O3,TiO2,或V2O5的目标。将膜在氧气中在400°C至800°C的温度下热处理60分钟。结果表明,掺杂4.0wt%Al_2O_3、1.0wt%TiO_2和0.2wt%V_2O_5的薄膜在300°C下对TMA气体的灵敏度和选择性都有所提高。掺杂膜厚度为120 nm,在700°C氧气中退火60 min的传感器对TMA表现出相当优异的灵敏度和选择性,以及电稳定性。当暴露于鲭鱼的气味时,使用该膜的传感器可以很好地跟踪其在储存期间的劣化。
To obtain a sensitive sensor for TMA gas, ZnO-based films were fabricated by a rf magnetron sputtering method using targets added with Al2O3, TiO2, or V2O5. The films were heat-treated at a temperature between 400°C and 800°C for 60 min in oxygen. It was found that the sensitivity and selectivity of the films for TMA gas at 300°C increased by doping with 4.0 wt% Al2O3, 1.0 wt% TiO2and 0.2 wt% V2O5. The sensor with the doped film 120 nm thick and annealed at 700°C for 60 min in oxygen exhibited fairly excellent sensitivity and selectivity to TMA, and electrical stability. Upon exposure to odors from a mackerel, the sensor using this film could trace well its deterioration during storage.