N-type field-effect transistor based on a fluorinated-graphene
N-type field-effect transistor based on a fluorinated-graphene
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DOI：
10.1016/j.orgel.2008.01.002
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发表时间：
2008-06-01
影响因子：
3.2
通讯作者：
Takeuchi, Hisato
中科院分区：
文献类型：
--
作者：
Mori, Tomohiko;Kikuzawa, Yoshihiro;Takeuchi, Hisato
合成了氟化石墨烯2，5，8，11，14，17-hexafluoro-hexa-peri-hexabenzocoronene(6F-HBc)。采用真空升华法制备了6f-HbC薄膜，作为有机场效应晶体管(OFET)的有源层。含有6F-HBC的OFET表现为n型半导体，而含有六周六苯并冠烯(HBC)的OFET表现为p型半导体。6F-HBC的场效应迁移率和开关比分别为1.6×10~(-2)cm(2)/vs和10(4)。六氟取代使最高占据分子轨道和最低空分子轨道能级都降低了0.5 eV，适合于电极的电子注入。6F-HBC具有面对面的结构，这是一种较好的载流子传输的晶体结构。(C)2008爱思唯尔B.V.保留所有权利。
A fluorinated-graphene, 2,5,8,11,14,17-hexafluoro-hexa-peri-hexabenzocoronene (6F-HBC), has been synthesized. 6F-HBC was deposited by vacuum sublimation as an active layer in an organic field-effect transistor (OFET). The OFET with 6F-HBC performed as an n-type semiconductor, while that with hexa-peri-hexabenzocoronene (HBC) performed as a p-type semiconductor. The electron field-effect mobility and on/off ratio for 6F-HBC were 1.6 x 10(-2) cm(2)/Vs and 10(4), respectively. Hexafluoro-substituting reduces both the highest occupied molecular orbital and lowest unoccupied molecular orbital levels by 0.5 eV, which is suitable for electron injection from the electrode. 6F-HBC has a face-to-face structure which is a preferable crystal structure for carrier transport. (C) 2008 Elsevier B.V. All rights reserved.