Octave-spanning microcomb generation in 4H-silicon-carbide-on-insulator photonics platform
Octave-spanning microcomb generation in 4H-silicon-carbide-on-insulator photonics platform
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DOI：
10.1364/prj.449267
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发表时间：
2022-04-01
影响因子：
7.6
通讯作者：
Li, Qing
中科院分区：
文献类型：
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作者：
Cai, Lutong;Li, Jingwei;Li, Qing
碳化硅最近因其独特的性质而成为一种有前途的光子材料，包括具有强的二阶和三阶非线性系数，以及可用于大量量子应用的各种色心。在这里，我们报告的设计和演示的倍频程跨越微梳在411-绝缘体上碳化硅平台的第一次，据我们所知。这样的宽带操作是通过优化的纳米纤维实现>1百万的内在品质因数在36 μ m半径的microwave谐振器，和仔细的色散工程，通过调查不同的模式家庭的色散特性。例如，对于其色散可以通过简单地改变微梳波导宽度来定制的基横电模式，我们实现了覆盖从1100 nm到2400 nm的波长范围的微梳光谱，片上功率接近120 mW。虽然所观察到的梳状态被证实是混沌的，而不是孤子，获得如此大的带宽是实现f-2f自参考的关键一步。此外，我们还观察到一个相干孤子晶体状态的基本横磁模式，它表现出更强的色散比基本横电模式，因此带宽更窄。(C)2022中国激光出版社
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a wealth of quantum applications. Here, we report the design and demonstration of octave-spanning microcombs in a 411-silicon-carbide-on-insulator platform for the first time, to our knowledge. Such broadband operation is enabled by optimized nanofabrication achieving >1 million intrinsic quality factors in a 36-mu m-radius microring resonator, and careful dispersion engineering by investigating the dispersion properties of different mode families. For example, for the fundamental transverse-electric mode whose dispersion can be tailored by simply varying the microring waveguide width, we realized a microcomb spectrum covering the wavelength range from 1100 nm to 2400 nm with an on-chip power near 120 mW. While the observed comb state is verified to be chaotic and not soliton, attaining such a large bandwidth is a crucial step towards realizing f-2f self-referencing. In addition, we also observed a coherent soliton-crystal state for the fundamental transverse-magnetic mode, which exhibits stronger dispersion than the fundamental transverse-electric mode and hence a narrower bandwidth. (C) 2022 Chinese Laser Press