Single-photon-driven high-order sideband transitions in an ultrastrongly coupled circuit-quantum-electrodynamics system
Single-photon-driven high-order sideband transitions in an ultrastrongly coupled circuit-quantum-electrodynamics system
复制标题
超强耦合电路量子电动力学系统中单光子驱动的高阶边带跃迁
DOI：
10.1103/physreva.96.012325
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发表时间：
2017-07-19
影响因子：
2.9
通讯作者：
You, J. Q.
中科院分区：
文献类型：
--
作者：
Chen, Zhen;Wang, Yimin;You, J. Q.
本文报道了在磁通量子比特与共面波导谐振腔超强耦合的量子电路系统中，在单光子水平上观察到的高阶边带跃迁。当耦合强度达到谐振腔基频的10%时，我们得到了清晰的高阶红边带和一阶蓝边带跃迁的特征，这主要是由于超强Rabi耦合。我们的观察推进了对超强耦合系统的理解，并为在单光子水平上研究量子拉比模型中的高阶过程铺平了道路。
We report the experimental observation of high-order sideband transitions at the single-photon level in a quantum circuit system of a flux qubit ultrastrongly coupled to a coplanar waveguide resonator. With the coupling strength reaching 10% of the resonator's fundamental frequency, we obtain clear signatures of higher order red-sideband and first-order blue-sideband transitions, which are mainly due to the ultrastrong Rabi coupling. Our observation advances the understanding of ultrastrongly coupled systems and paves the way to study high-order processes in the quantum Rabi model at the single-photon level.