Czochralski crystal growth for laser cooling

Czochralski crystal growth for laser cooling
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DOI:
10.1117/1.oe.56.1.011107
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发表时间:
2016-10
影响因子:
1.3
通讯作者:
G. Cittadino;A. Volpi;A. Di Lieto;M. Tonelli
G. Cittadino;A. Volpi;A. Di Lieto;M. Tonelli
中科院分区:
工程技术4区
文献类型:
--
作者:
G. Cittadino;A. Volpi;A. Di Lieto;M. Tonelli

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抽象的。在固体物理中的激光冷却晶体中,以较快的生长速度获得较大尺寸的晶体和无缺陷的高光学质量是非常重要的。要做到这一点,生长晶体的方法之一是直拉法。将介绍直拉法,特别是比萨激光应用新材料实验室的炉子。然后描述了晶体氟化物的生长参数,并说明了这些参数是如何产生适合于光学冷却的样品的。将给出避免晶体内部污染的所有工艺,如OH−离子,以及如何避免Yb3+还原为Yb2+。将对所有样品的光谱分析进行处理,以获得每个样品的冷却参数λf和αb。然后,将讨论效率模型,并将显示由样品自身的晶体获得的冷却数据效率。
Abstract. In laser cooling of crystals in solid-state physics, it is really important to obtain crystals with a large size at a relatively fast growth rate and high-optical quality that is defect-free. To get that, one of the methods to grow crystals is the Czochralski technique. The Czochralski technique will be presented and, in particular, the furnaces in New Materials for Laser Applications Laboratories of Pisa for this application will be discussed. Afterward the parameters for the growth of crystal fluorides are depicted and it is shown how these parameters lead to build samples suitable for optical cooling. All processes that are necessary to avoid contamination inside crystals like OH− ion and how to avoid reduction of Yb3+ to Yb2+ will be given. Spectroscopy of all samples will be treated in order to obtain the cooling parameters λf and αb for each sample. Afterward, an efficiency model will be discussed and the data efficiency of cooling obtained by a sample’s own crystals will be shown.