Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge
Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge
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DOI：
10.1063/1.2213203
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发表时间：
2006-06
影响因子：
4
通讯作者：
F. D. Auret;W. Meyer;S. Coelho;M. Hayes
中科院分区：
文献类型：
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作者：
F. D. Auret;W. Meyer;S. Coelho;M. Hayes
利用深能级瞬态光谱研究了Pd肖特基触点电子束沉积（EBD）过程中n型锗中引入的空穴和电子阱缺陷。我们还比较了这些缺陷与同一材料在高能电子辐照下引入的缺陷的性质。结果表明，EBD在锗表面及其附近引入了几个电子和空穴陷阱。EBD过程中引入的主要缺陷具有与高能粒子辐照Ge过程中引入的V-Sb络合物或E中心相似的电子性质。该缺陷具有两个能级E0.38和H0.30，分别对应于它的（−−,−）和（−,0）电荷态。
We have investigated by deep level transient spectroscopy the hole and electron trap defects introduced in n-type Ge during electron beam deposition (EBD) of Pd Schottky contacts. We have also compared the properties of these defects with those introduced in the same material during high-energy electron irradiation. Our results show that EBD introduces several electron and hole traps at and near the surface of Ge. The main defect introduced during EBD has electronic properties similar to those of the V–Sb complex, or E center, introduced during high-energy particle irradiation of Ge. This defect has two levels E0.38 and H0.30 that correspond to its (−−,−) and (−,0) charge states.