Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor
Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor
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DOI：
10.1063/1.3125449
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发表时间：
2009-06-01
影响因子：
3.2
通讯作者：
Wang, Zhong Lin
中科院分区：
文献类型：
--
作者：
Gao, Zhiyuan;Zhou, Jun;Wang, Zhong Lin
通过数值计算和实验观察，研究了ZnO纳米线中的压电势对纳米线场效应晶体管输运特性的影响。在不同的应变条件下，包括拉伸、压缩、扭曲及其组合，在整个纳米线中产生压电电势，以调制/交替金属-ZnO纳米线接触的输运性质，导致两端的对称和非对称接触之间的切换，甚至将欧姆接触类型转变为二极管。通常观察到的自然整流行为的制作ZnO纳米线可以归因于应变，这是无意中创建的纳米线在器件制造和材料处理。这一工作为压电势控制电子输运和器件提供了进一步的证据。例如，在一个实施例中，压电电子学(C)2009年美国物理学会。[DOI：10.1063/1.3125449]
We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulate/alternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e. g., piezotronics. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3125449]