InP(001)-(2 x 1) surface: a hydrogen stabilized structure.
InP(001)-(2 x 1) surface: a hydrogen stabilized structure.
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InP(001)-(2 x 1) 表面：氢稳定结构。
DOI：
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发表时间：
2003
影响因子：
8.6
通讯作者：
W. Richter
中科院分区：
文献类型：
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作者：
Wolf Gero Schmidt;P. Hahn;F. Bechstedt;Norbert Esser;Patrick Vogt;A. Wange;W. Richter
据报道，InP(001)(2×1)表面由一层弯曲的磷二聚体半导体单层组成。这种明显违反电子计数原理的现象可以用强电子关联效应来解释。结合第一性原理计算、反射各向异性谱和LEED实验，我们发现(2×1)重构根本不是一个干净的表面：它是由氢以交替顺序吸附在屈曲的P-二聚体上引起的。这样，与标准气相外延条件相关的InP生长面的微观结构被分辨出来，并表明符合电子计数规则。
The InP(001)(2 x 1) surface has been reported to consist of a semiconducting monolayer of buckled phosphorus dimers. This apparent violation of the electron counting principle was explained by effects of strong electron correlation. Combining first-principles calculations with reflectance anisotropy spectroscopy and LEED experiments, we find that the (2 x 1) reconstruction is not at all a clean surface: it is induced by hydrogen adsorbed in an alternating sequence on the buckled P dimers. Thus, the microscopic structure of the InP growth plane relevant to standard gas phase epitaxy conditions is resolved and shown to obey the electron counting rule.