Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process
Charge collection and non-ionizing radiation tolerance of CMOS pixel sensors using a 0.18 μm CMOS process
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DOI：
10.1016/j.nima.2016.03.031
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发表时间：
2016-09
影响因子：
1.4
通讯作者：
Ying Zhang;H. Zhu;Liang Zhang;M. Fu
中科院分区：
文献类型：
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作者：
Ying Zhang;H. Zhu;Liang Zhang;M. Fu
摘要拟议的圆形电子正电子对撞机（CEPC）将主要用于对发现的希格斯玻色子进行精确测量。它最里面的顶点检测器，这将发挥关键作用，在重口味的标签，必须与细间距硅像素传感器，低功耗和快速读出。CMOS像素传感器（CPS）作为最有前途的候选技术之一，已经在多个高能物理实验中展示了其优异的性能。因此，已考虑用于CEPC顶点检测器的研发。在本文中，我们提出了初步的研究，以提高收集的信号电荷超过等效输入电容比（Q/C），这将是至关重要的，以降低模拟功耗。我们进行了详细的3D器件模拟，并评估了二极管几何形状、外延层特性和非电离辐射损伤的潜在影响。我们提出了一种新的方法来改善模拟中边界条件的处理。沿着TCAD模拟，我们已经设计了探索性的原型，采用TowerJazz 0.18 μm CMOS成像传感器工艺，我们将用未来的测量来验证模拟结果。
Abstract The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex detector, which will play a critical role in heavy-flavor tagging, must be constructed with fine-pitched silicon pixel sensors with low power consumption and fast readout. CMOS pixel sensor (CPS), as one of the most promising candidate technologies, has already demonstrated its excellent performance in several high energy physics experiments. Therefore it has been considered for R&D for the CEPC vertex detector. In this paper, we present the preliminary studies to improve the collected signal charge over the equivalent input capacitance ratio (Q/C), which will be crucial to reduce the analog power consumption. We have performed detailed 3D device simulation and evaluated potential impacts from diode geometry, epitaxial layer properties and non-ionizing radiation damage. We have proposed a new approach to improve the treatment of the boundary conditions in simulation. Along with the TCAD simulation, we have designed the exploratory prototype utilizing the TowerJazz 0.18 μm CMOS imaging sensor process and we will verify the simulation results with future measurements.