The Influence of Air Exposure Time on Bonding Strength in Au-Au Surface Activated Wafer Bonding
The Influence of Air Exposure Time on Bonding Strength in Au-Au Surface Activated Wafer Bonding
复制标题
Au-Au表面活化晶片键合中空气暴露时间对键合强度的影响
DOI：
10.1109/icep-iaac.2015.7111055
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
Kei Hagiwara
中科院分区：
文献类型：
--
作者：
Ken Okumura;Eiji Higurashi;Tadatomo Suga;Kei Hagiwara
在本文中，我们研究了金 (Au) 沉积后暴露在空气中的时间对 Au-Au 键合中键合强度的影响。具有光滑金薄膜的合成石英玻璃晶片（厚度：30 nm，均方根表面粗糙度：0.43 nm）经过氩射频等离子体活化工艺后，即使在金沉积后长期暴露在空气中（800-2000小时），也能在室温下成功地在空气中键合。获得了高芯片剪切强度，并且在芯片剪切测试期间断裂通常发生在块状玻璃内部，而不是在粘合界面处。
In this paper, we investigated the influence of air exposure time after gold (Au) deposition on bonding strength in Au-Au bonding. Synthetic quartz glass wafers with smooth Au thin film (thickness: 30 nm, root mean square surface roughness: 0.43 nm) were successfully bonded in air at room temperature after argon radio frequency plasma activation process, even when they were exposed to air for a long term (800-2000 h) after Au deposition. High die-shear strength was obtained and the fractures typically occurred inside the bulk glass during die-shear test rather than at the bonded interface.