Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures
Nonvolatile Floating-Gate Memories Based on Stacked Black Phosphorus-Boron Nitride-MoS2 Heterostructures
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DOI：
10.1002/adfm.201503645
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发表时间：
2015-12-16
影响因子：
19
通讯作者：
Zhang, Zengxing
中科院分区：
文献类型：
--
作者：
Li, Dong;Wang, Xiaojuan;Zhang, Zengxing
基于层叠式2D原子晶体的范德华异质结因其突出的性质以及在柔性透明电子学和光电子学方面的潜在应用而成为研究的热点。本文报道了一种基于浮栅场效应晶体管的非易失性存储器件，该器件采用2D材料堆积而成，其中少层黑磷作为沟道层，六方氮化硼作为隧道势垒层，MoS_2作为电荷捕获层。由于黑磷的双极性行为，电子和空穴可以存储在MoS2电荷捕获层中。这种异质结构具有显著的擦除/编程比和耐久性能，可用于高性能的类型切换存储器和可重构的逆变逻辑电路，这表明它在完全基于2D原子晶体的存储器件中具有良好的应用前景。
Research on van der Waals heterostructures based on stacked 2D atomic crystals is intense due to their prominent properties and potential applications for flexible transparent electronics and optoelectronics. Here, nonvolatile memory devices based on floating-gate field-effect transistors that are stacked with 2D materials are reported, where few-layer black phosphorus acts as channel layer, hexagonal boron nitride as tunnel barrier layer, and MoS2 as charge trapping layer. Because of the ambipolar behavior of black phosphorus, electrons and holes can be stored in the MoS2 charge trapping layer. The heterostructures exhibit remarkable erase/program ratio and endurance performance, and can be developed for high-performance type-switching memories and reconfigurable inverter logic circuits, indicating that it is promising for application in memory devices completely based on 2D atomic crystals.