Opportunities and challenges of integrated WBG power electronics development
Opportunities and challenges of integrated WBG power electronics development
复制标题
集成WBG电力电子发展的机遇与挑战
DOI：
10.1109/3d-peim49630.2021.9497265
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
A. Castellazzi
中科院分区：
文献类型：
--
作者：
A. Castellazzi
宽带隙半导体为电力电子技术发展的关键参数（效率、功率密度和可靠性）提供了足够的发展空间。特别是，它们具有更高的开关速度，更高的开关频率和工作温度的能力已被证明在系统级上产生重要的好处，即使晶体管被用作硅晶体管的临时替代品。然而，充分利用宽带隙器件的优越特性及其随后的大规模部署取决于辅助技术和解决方案的定制开发，包括冷却和封装，以及设计工具和验证方法。本文综述了过去几年的一些进展，并讨论了确保成功大规模应用的未来需求。
Wide-band-gap semiconductors offer ample scope for progress beyond state-of-the-art in the key parameters of power electronics technology evolution: efficiency, power density and reliability. In particular, their capability for higher switching speeds, higher switching frequencies and operating temperatures has been demonstrated to yield important benefits at system level, even when transistors are used as a drop-in replacement of Si ones. Still, full exploitation of the superior features of wide-band-gap devices and their subsequent large volume deployment is conditional to the bespoke development of auxiliary technology and solutions, including cooling and packaging, as well as design tools and validation methodologies. This papers reviews some of the progress made over the past few years and discusses future needs to ensure successful large-scale application.