Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing
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DOI：
10.1088/0268-1242/19/5/003
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发表时间：
2004-05
影响因子：
1.9
通讯作者：
Yi Wanbing;E. Zhang;Man Chen;Ning Li;Guoqiang Zhang;Zhilu Liu;Xin Wang
中科院分区：
文献类型：
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作者：
Yi Wanbing;E. Zhang;Man Chen;Ning Li;Guoqiang Zhang;Zhilu Liu;Xin Wang
采用序次氧氮注入并在每次注入后退火的方法制备了氧氮注入分离（SIMON）绝缘子上硅（SOI）材料。进行SIMS、XTEM、HRTEM分析。结果表明，优良的埋地多层绝缘层形成良好，并对其可能的机理进行了探讨。SIMON材料制备的PMOS晶体管在辐照前后漏极漏电流-栅极源电压（I-V）曲线变化不大，证实了SIMON材料具有良好的总剂量辐照耐受能力。
Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current-gate source voltage (I-V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.