Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy
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DOI：
10.1103/physrevb.83.125203
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发表时间：
2011-03-14
影响因子：
3.7
通讯作者：
Schmidt, Jan
中科院分区：
文献类型：
--
作者：
Baranov, Pavel G.;Bundakova, Anna P.;Schmidt, Jan
实验结果表明，在SiC中的Si空位是一个有前途的量子系统的单缺陷和单光子光谱在红外区域。调查进行了电子顺磁共振（EPR），零场光学检测磁共振（ODMR），直接检测EPR（DD-EPR），和高分辨率荧光激发光谱。根据温度，晶体多型体，和晶体位置，两个相反的计划已被观察到的光学对准的人口的自旋子级的高自旋基态的Si空位在SiC的非偏振光照射后，在零声子线（ZPL）。一个巨大的变化已被发现在零磁场中的ZPL的发光强度的应用时，共振微波诱导的自旋子能级之间的空位基态的跃迁，从而打开一个单一的空位的磁共振检测的可能性。用DD-EPR研究了Si空位基态自旋子能级布居的光学排列。已经观察到宽度小于0.05 meV的Si空位的令人惊讶的窄ZPL，这似乎是迄今为止在SiC中检测到的最窄的。
Results of experiments are presented that suggest that the Si vacancy in SiC is a promising quantum system for single-defect and single-photon spectroscopy in the infrared region. The investigation was carried out with electron paramagnetic resonance (EPR), zero-field optically detected magnetic resonance (ODMR), direct-detection EPR (DD-EPR), and high-resolution fluorescence-excitation spectroscopy. Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of the spin sublevels of the high-spin ground state of the Si vacancy in SiC upon irradiation with unpolarized light at the zero-phonon lines (ZPLs). A giant change has been found in the luminescence intensity of the ZPLs in zero magnetic field upon the application of resonant microwaves which induce transitions between the spin sublevels of the vacancy ground state thus opening the possibility for magnetic-resonance detection of a single vacancy. The optical alignment of the populations of the spin sublevels in the ground state of the Si vacancy was shown with DD-EPR. Surprisingly narrow ZPLs of Si vacancies with a width less than 0.05 meV have been observed which seem to be the narrowest detected so far in SiC.