Semiconductor Modeling Techniques
Semiconductor Modeling Techniques
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半导体建模技术
DOI：
10.1007/978-3-642-27512-8_8
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Alexandropoulos D
中科院分区：
文献类型：
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作者：
Alexandropoulos D
本章的范围是介绍垂直腔(VC)和环谐振器(MRS)的概念。本章首先介绍了突破传统边缘发射腔的动机，重点介绍了VC和MRS的潜力。然后分析了VC和MRS的基本物理原理，重点分析了器件设计方面的问题。研究了VCs在光放大中的应用。从偏振动力学的角度对激光VC进行了分析。讨论了单环和多环结构中的MRS，如耦合谐振器光波导(CROWS)和侧面耦合的集成间隔序列谐振器(剪刀)。研究了用于激光器和放大器的有源MRS。
The scope of this chapter is to present the concepts of vertical cavities (VCs) and-ring resonators (MRs). The chapter commences with the motivation for progressing beyond conventional edge-emitting cavities emphasising on the potential of VC and MRs. The fundamental physics of VC and MRs is then analysed focusing on device design aspects. VCs are studied for optical amplifier applications. Lasing VCs are analysed in terms of polarisation dynamics. MRs in single and multi-ring configurations, like coupled resonator optical waveguides (CROWs) and side-coupled integrated spaced sequence of resonators, (SCISSORs) are discussed. Active MRs for lasers and amplifiers are investigated.