The effects of swift heavy-ion irradiation on helium-ion-implanted silicon
The effects of swift heavy-ion irradiation on helium-ion-implanted silicon
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DOI：
10.1016/j.nimb.2014.07.010
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发表时间：
2014-10-15
影响因子：
1.3
通讯作者：
Pang, L. L.
中科院分区：
文献类型：
--
作者：
Li, B. S.;Du, Y. Y.;Pang, L. L.
横截面透射电子显微镜 (XTEM) 用于研究快重离子辐照对氦注入硅的影响。在600 K 下向(100) 取向的硅片注入30 键氦气，剂量为3 x 10(16) He/cm(2)。随后，用792 MeV 氩离子照射注入氦气的硅片。通过 XTEM 分析检查晶圆中的 He 气泡和扩展缺陷。结果表明，Ar离子照射后He气泡的平均直径增大，而He气泡的数密度减小。 Ar 离子照射后观察到的 He 气泡的微观结构与在 1073 K 退火 30 分钟后观察到的微观结构相当。类似地，扩展缺陷（即弗兰克环）的平均尺寸在氩离子照射后增加。讨论了可能的机制。 (C) 2014 Elsevier B.V. 保留所有权利。
Cross-sectional transmission electron microscopy (XTEM) was used to study the effects of irradiation with swift heavy ions on helium-implanted silicon. (100)-oriented silicon wafers were implanted with 30 key helium to a dose of 3 x 10(16) He/cm(2) at 600 K. Subsequently, the helium-implanted Si wafers were irradiated with 792 MeV argon ions. The He bubbles and extended defects in the wafers were examined via XTEM analysis. The results reveal that the mean diameter of the He bubbles increases upon Ar-ion irradiation, while the number density of the He bubbles decreases. The microstructure of the He bubbles observed after Ar-ion irradiation is comparable to that observed after annealing at 1073 K for 30 min. Similarly, the mean size of the extended defects, i.e., Frank loops, increases after Ar-ion irradiation. Possible mechanisms are discussed. (C) 2014 Elsevier B.V. All rights reserved.