Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
Measurements of the spin-orbit interaction and Landé g factor in a pure-phase InAs nanowire double quantum dot in the Pauli spin-blockade regime
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DOI：
10.1063/1.4960464
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发表时间：
2016-07
影响因子：
4
通讯作者：
Ji-Yin Wang;Shaoyun Huang;Zijin Lei;D. Pan;Jianhua Zhao;H. Xu
中科院分区：
文献类型：
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作者：
Ji-Yin Wang;Shaoyun Huang;Zijin Lei;D. Pan;Jianhua Zhao;H. Xu
我们演示了半导体纳米线双量子点中自旋轨道相互作用和Lande g因子的直接测量。该设备是由一个单晶纯相InAs纳米线的顶部上的一个阵列的指状栅极上的Si/SiO2基板和测量进行泡利自旋封锁制度。结果表明，该双量子点具有较大的单重态-三重态能量分裂ΔST = 2.3 meV，较强的自旋轨道相互作用ΔSO = 140 μeV，较大且与能级有关的Lande g因子Δ SO = 12.5.这些结果表明，单晶纯相InAs纳米线是理想的半导体纳米结构在量子信息技术中的应用。
We demonstrate direct measurements of the spin-orbit interaction and Lande g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO2 substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of ΔST ∼ 2.3 meV, a strong spin-orbit interaction of ΔSO ∼ 140 μeV, and a large and strongly level-dependent Lande g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductor nanostructures for applications in quantum information technologies.