Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
Performance breakthrough in 8 nm gate length Gate-All-Around nanowire transistors using metallic nanowire contacts
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使用金属纳米线触点的 8 nm 栅极长度全环绕栅极纳米线晶体管取得性能突破
DOI：
10.1109/vlsit.2008.4588553
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
D. Kwong
中科院分区：
文献类型：
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作者：
Y. Jiang;T. Liow;N. Singh;L. Tan;G. Lo;D. Chan;D. Kwong
在极度缩放的GAA纳米线器件中的寄生S/D电阻会病理性地限制器件驱动电流性能。我们证明了第一次，S/D扩展掺杂剂分布工程与成功集成的低电阻率金属纳米线接触大大降低了寄生电阻。这使得在这项工作中的8纳米栅极长度GAA纳米线器件，以达到创纪录的高驱动电流3740 μ A/妈妈。
Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for the first time, that S/D extension dopant profile engineering together with successful integration of low resistivity metallic nanowire contacts greatly reduces parasitic resistances. This allows 8 nm gate length GAA nanowire devices in this work to attain record-high drive currents of 3740 muA/mum.