Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor
Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor
复制标题
核反应堆中子辐照对 CMOS APS 图像传感器的位移损伤效应
DOI：
10.1063/1.4889878
复制
发表时间：
2014-07-01
期刊：
影响因子：
1.6
通讯作者：
Sheng, Jiangkun
中科院分区：
文献类型：
--
作者：
Wang, Zujun;Huang, Shaoyan;Sheng, Jiangkun
介绍了核反应堆中子辐照对CMOS APS图像传感器位移损伤效应的实验研究。CMOS APS图像传感器采用标准的0.35 μ m CMOS技术制造。中子束通量约为1.33 × 10 ~（8）N/cm ~ 2·s。三个样品分别暴露于1 MeV中子当量注量1 x 10（11）、5 x 10（11）和1 x 10（12）n/cm（2）。研究了平均暗信号（K-D）、暗信号尖峰、暗信号不均匀性（DSNU）、噪声（V-N）、饱和输出信号电压（V-S）和动态范围（DR）随中子注量的变化。分析了CMOS APS图像传感器的退化机理。中子位移损伤引起的平均暗信号增加似乎与位移损伤剂量成正比。利用CMOS APS图像传感器在中子辐照下的暗图像研究了暗信号尖峰的产生。(C)2014年作者。
The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 mu m CMOS technology. The flux of neutron beams was about 1.33 x 10(8) n/cm(2)s. The three samples were exposed by 1 MeV neutron equivalent-fluence of 1 x 10(11), 5 x 10(11), and 1 x 10(12) n/cm(2), respectively. The mean dark signal (K-D), dark signal spike, dark signal non-uniformity (DSNU), noise (V-N), saturation output signal voltage (V-S), and dynamic range (DR) versus neutron fluence are investigated. The degradation mechanisms of CMOS APS image sensors are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from CMOS APS image sensors irradiated by neutrons are presented to investigate the generation of dark signal spike. (C) 2014 Author(s).