CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode

CMOS image sensors comprised of floating diffusion driving pixels with buried photodiode
复制标题

CMOS 图像传感器由带有埋置光电二极管的浮动扩散驱动像素组成

DOI:
10.1109/jssc.2004.837085
复制
发表时间:
2004
影响因子:
5.4
通讯作者:
H. Sumi
H. Sumi
中科院分区:
工程技术1区
文献类型:
--
作者:
K. Mabuchi;N. Nakamura;E. Funatsu;T. Abe;T. Umeda;Tetsuro Hoshino;R. Suzuki;H. Sumi

文献摘要

被引文献

相似文献

本发明描述了能够实现具有比常规像素类型小的像素的高质量暗场景图像的新CMOS图像传感器。用于开发它们的新技术是浮动扩散(FD)驱动像素,其具有三个或更少晶体管的掩埋光电二极管,以及具有新光电二极管结构和FD升压方法的低压驱动技术。通过使用0.25-/spl mu/m技术,制造了由3.45-/spl mu/m尺寸像素组成的原型芯片。还制造了由在两个相邻像素之间共享FD(2像素共享)的3.1-/spl μ/m尺寸像素组成的原型芯片。完整的传输操作,也就是说,零滞后和零像素kTC噪声是在2.5 V的电源电压下实现的,具有制造稳定性。对于3.45-/spl mu/m和3.1-/spl mu/m尺寸的像素芯片,实现的饱和电压分别为510和360 mV。此外,采用了一种组合双相关双采样(CDS)结构,可以灵活地处理两组信号的组合。由于其像素尺寸小、图像质量高和输出灵活性,该框架有可能在数码相机和摄像机的批量市场中用CMOS图像传感器取代电荷耦合器件(CCD)图像传感器。
New CMOS image sensors that can realize high quality dark scene images with pixels smaller than conventional pixel types are described. The new technologies used to develop them are floating diffusion (FD) driving pixel with a buried photodiode with three or less transistors, and low-voltage driving technologies with a new photodiode structure and FD-boost method. Through the use of the 0.25-/spl mu/m technology, prototype chips consisting of 3.45-/spl mu/m size pixels were manufactured. Prototype chips consisting of 3.1-/spl mu/m size pixels which share FD between two neighboring pixels (2-pixel-sharing) were also manufactured. The complete transfer operation, that is to say, zero lag and zero pixel kTC noise was achieved at a supply voltage of 2.5 V with manufacturing stability. Realized saturation voltages were 510 and 360 mV for 3.45-/spl mu/m and 3.1-/spl mu/m size pixel chips, respectively. In addition, a combined double-correlated double sampling (CDS) architecture which can flexibly process two sets of signals in combination were employed. Due to its small pixel size, high image quality, and output flexibility, this framework has potential for replacing charge-coupled device (CCD) image sensors with CMOS image sensors in volume markets of digital still cameras and camcorders.