Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene.

Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene.
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DOI:
10.1038/ncomms14453
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发表时间:
2017-02-15
影响因子:
16.6
通讯作者:
Chang CR
Chang CR
中科院分区:
综合性期刊1区
文献类型:
--
作者:
Wu HC;Chaika AN;Hsu MC;Huang TW;Abid M;Abid M;Aristov VY;Molodtsova OV;Babenkov SV;Niu Y;Murphy BE;Krasnikov SA;Lübben O;Liu H;Chun BS;Janabi YT;Molotkov SN;Shvets IV;Lichtenstein AI;Katsnelson MI;Chang CR

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Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin–orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene. Owing to long spin lifetime and diffusion length, graphene holds promise for spintronics, yet it does not possess intrinsic magnetic properties. Here, the authors observe experimentally a large, positive magnetoresistance at graphene nanodomain boundaries.