Non-saturating magnetoresistance in heavily disordered semiconductors
Non-saturating magnetoresistance in heavily disordered semiconductors
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DOI：
10.1038/nature02073
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发表时间：
2003-11-13
期刊：
影响因子：
64.8
通讯作者：
Littlewood, PB
中科院分区：
文献类型：
--
作者：
Parish, MM;Littlewood, PB
均匀半导体的电阻在低磁场下随磁场的平方增加，并且除了在非常特殊的情况下，在远大于载流子迁移率的倒数的磁场下饱和，通常为1 T的数量级（参考文献1，2）。最近在掺杂的银硫族化物（3-5）中观察到了这种行为的令人惊讶的例外，其表现出非常大的准线性磁阻响应，该响应向下延伸到低场并且即使在55 T和更高的极端场下也能存活。在这里，我们提出了一个简单的模型，宏观无序和强烈不均匀的半导体，表现出类似的非饱和磁阻。除了为掺杂银硫族化物的行为提供可能的解释外，我们的模型还为具有大的、可控的和线性响应的磁场传感器的构造提出了潜在的路线。
The resistance of a homogeneous semiconductor increases quadratically with magnetic field at low fields and, except in very special cases, saturates at fields much larger than the inverse of the carrier mobility, a number typically of the order of 1 T (refs 1, 2). A surprising exception to this behaviour has recently been observed in doped silver chalcogenides(3-5), which exhibit an anomalously large, quasi-linear magnetoresistive response that extends down to low fields and survives, even at extreme fields of 55 T and beyond. Here we present a simple model of a macroscopically disordered and strongly inhomogeneous semiconductor that exhibits a similar non-saturating magnetoresistance. In addition to providing a possible explanation for the behaviour of doped silver chalcogenides, our model suggests potential routes for the construction of magnetic field sensors with a large, controllable and linear response.