Binding of hanatoxin to the voltage sensor of Kv2.1.

Binding of hanatoxin to the voltage sensor of Kv2.1.
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DOI:
10.3390/toxins4121552
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发表时间:
2012-12-18
期刊:
影响因子:
4.2
通讯作者:
Chung SH
Chung SH
中科院分区:
医学2区
文献类型:
--
作者:
Chen R;Robinson A;Chung SH

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Hanatoxin 1 (HaTx1) 是一种从蜘蛛毒液中分离出来的多肽毒素。 HaTx1 以纳摩尔亲和力有效抑制电压门控钾通道 kv2.1。其受体位点已被证明包含电压传感器 (VS) 的 S3b-S4a 桨。在这里,使用分子对接方法和分子动力学检查了 HaTx1 与人 Kv2.1 的 VS 在开放和静息状态下的结合。分子对接计算预测 VS 在静息状态下有两种不同的结合模式。在两种结合模式中,毒素结合来自 S2 和 S3 螺旋或来自 S1 和 S4 螺旋的 S3b-S4a。发现两种模式在嵌入脂质双层时都是稳定的。只有毒素结合S2和S3螺旋的S3b-S4a桨的模式与诱变实验一致,并被认为是正确的。然后毒素在开放状态下与 VS 对接,并且发现毒素-VS 相互作用不太有利。对 F278R 和 E281K 突变体 VS 进行的计算诱变计算表明,突变可能通过削弱毒素与 VS 之间的非键合相互作用来降低毒素结合亲和力。总的来说,我们的计算再现了广泛的实验数据,并表明 HaTx1 从 S2 和 S3 螺旋与 Kv2.1 的 S3b-S4a 桨结合。
Hanatoxin 1 (HaTx1) is a polypeptide toxin isolated from spider venoms. HaTx1 inhibits the voltage-gated potassium channel kv2.1 potently with nanomolar affinities. Its receptor site has been shown to contain the S3b-S4a paddle of the voltage sensor (VS). Here, the binding of HaTx1 to the VSs of human Kv2.1 in the open and resting states are examined using a molecular docking method and molecular dynamics. Molecular docking calculations predict two distinct binding modes for the VS in the resting state. In the two binding modes, the toxin binds the S3b-S4a from S2 and S3 helices, or from S1 and S4 helices. Both modes are found to be stable when embedded in a lipid bilayer. Only the mode in which the toxin binds the S3b-S4a paddle from S2 and S3 helices is consistent with mutagenesis experiments, and considered to be correct. The toxin is then docked to the VS in the open state, and the toxin-VS interactions are found to be less favorable. Computational mutagenesis calculations performed on F278R and E281K mutant VSs show that the mutations may reduce toxin binding affinity by weakening the non-bonded interactions between the toxin and the VS. Overall, our calculations reproduce a wide range of experimental data, and suggest that HaTx1 binds to the S3b-S4a paddle of Kv2.1 from S2 and S3 helices.
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