Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy
Growth mechanism of c-axis-oriented AlN on (001) diamond substrates by metal-organic vapor phase epitaxy
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DOI：
10.1016/j.jcrysgro.2009.11.017
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发表时间：
2010-01-15
影响因子：
1.8
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Imura, Masataka;Nakajima, Kiyomi;Amano, Hiroshi
采用金属-有机气相外延的方法在（0 0 1）金刚石衬底上生长纤锌矿AlN层。利用原子力显微镜、x射线衍射仪和透射电子显微镜对AlN层的微观结构和生长机理进行了研究。在AlN生长初期，不同取向的AlN结晶颗粒在（0 0 1）金刚石表面随机形核。在生长的第二阶段，主要沿c轴取向的AlN晶粒生长，加入随机取向的AlN晶粒，然后继续生长。在生长的最后一步，在（0 0 1）金刚石衬底上获得了具有c轴取向双畴结构的连续AlN层。显微结构分析表明，< 1 1 (2)/ bar0 > AlN域或< 1 1 (1)/ bar0 > AlN域沿[1 10 10]菱形方向排列。在高达1270摄氏度的高温下，AlN晶粒沿[0 00 1]方向的生长速率高于沿其他方向的生长速率，这是生长机制的决定因素。
Wurtzite AlN layers are grown on a (0 0 1) diamond substrate by metal-organic vapor phase epitaxy. The microstructure and growth mechanism of the AlN layer are examined using atomic force microscopy, X-ray diffractometry, and transmission electron microscopy. At the initial stage of AlN growth, AlN crystalline particles with various orientations are randomly nucleated on the (0 0 1) diamond surface. At the second step of growth, AlN grains predominantly oriented along the c-axis grow, incorporate the randomly oriented AlN grains, and then grow further. At the final step of growth, a continuous AlN layer with a c-axis-oriented two-domain structure is obtained on the (0 0 1) diamond substrate. Microstructural analysis reveals that either the < 1 1 (2) over bar 0 > AlN domain or < 1 0 (1) over bar0 > AlN domain is aligned on the [1 1 0] diamond direction. The growth mechanism governs by the higher growth rate of the AlN grains along the [0 0 0 1] direction than along other directions at high growth temperatures up to 1270 degrees C. (C) 2009 Elsevier B.V. All rights reserved.