Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
Synthesis of AlN Grains and Liquid-Phase-Epitaxy (LPE) Growth of AlN Films Using Sn-Ca Mixed Flux
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DOI：
10.1143/jjap.44.l488
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发表时间：
2005-04
影响因子：
1.5
通讯作者：
H. Isobe;F. Kawamura;M. Kawahara;M. Yoshimura;Y. Mori;T. Sasaki
中科院分区：
文献类型：
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作者：
H. Isobe;F. Kawamura;M. Kawahara;M. Yoshimura;Y. Mori;T. Sasaki
使用Sn-Ca合金熔剂合成AlN晶粒。通过改变助熔剂组成（Ca：Sn）和Al与助熔剂的比例，研究了AlN晶粒的合成条件。Sn-Ca混合熔剂使我们能够在900°C和5 atm的相对温和的条件下合成AlN晶粒。我们还尝试了在蓝宝石（0001）衬底上通过金属有机化学气相沉积（MOCVD）生长AlN（0001）薄膜的同质外延液相外延（LPE）生长，并在液相中获得了1.8 μ m厚的AlN薄膜。
AlN grains were synthesized using a Sn-Ca alloy flux. Conditions under which AlN grains could be synthesized were investigated by varying the flux composition (Ca:Sn) and the ratio of Al to flux. The Sn-Ca mixed flux enabled us to synthesize AlN grains under the relatively mild conditions of 900°C and 5 atm. We also attempted homoepitaxial liquid-phase epitaxy (LPE) growth on an AlN(0001) thin film grown on a sapphire(0001) substrate by metalorganic chemical vapor deposition (MOCVD) and obtained 1.8-µm-thick-AlN film in the liquid phase.