Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates
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DOI：
10.1109/lpt.2013.2293611
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发表时间：
2014-02-15
影响因子：
2.6
通讯作者：
Kneissl, Michael
中科院分区：
文献类型：
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作者：
Martens, Martin;Mehnke, Frank;Kneissl, Michael
研究了272 ~ 279 nm紫外C波段光泵激光异质结的性能。激光异质结构通过金属有机物气相外延生长在（0001）平面AlN/蓝宝石、外延横向过生长（ELO）AlN/蓝宝石和体AlN衬底上，其穿透位错密度范围为2 × 10（10）至104 cm（-2）。我们发现，缺陷密度强烈影响激光器的性能。在谐振光泵浦条件下，在低缺陷密度AlN衬底上赝晶生长的AlGaN多量子阱激光器获得了50 mJ/cm（2）的最低脉冲阈值能量密度。还观察到激光的AlGaN MQW异质结ELO AlN/蓝宝石模板上生长。所有激光器中的激光发射都是TE偏振的。然而，没有观察到激光的异质结生长在高缺陷密度的AlN/蓝宝石。
The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sapphire, epitaxially laterally overgrown (ELO) AlN/sapphire, and bulk AlN substrates with threading dislocation densities ranging from 2x10(10) to 104 cm(-2). We found that the defect density strongly affects the laser performance. The lowest pulse threshold energy density of 50 mJ/cm(2) under resonant optical pumping condition was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate. Lasing was also observed for AlGaN MQW heterostructures grown on ELO AlN/sapphire templates. The laser emission in all lasers was TE polarized. However, no lasing was observed for heterostructures grown on high defect density AlN/sapphire.