Lead free halide perovskite Cs3Bi2I9 bulk crystals grown by a low temperature solution method
Lead free halide perovskite Cs3Bi2I9 bulk crystals grown by a low temperature solution method
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低温溶液法生长的无铅卤化物钙钛矿Cs3Bi2I9块状晶体
DOI：
10.1039/c8ce00925b
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发表时间：
2018-08
期刊：
影响因子：
3.1
通讯作者：
Wanqi Jie
中科院分区：
文献类型：
--
作者：
Hongjian Zhang;Yadong Xu;Qihao Sun;Jiangpeng Dong;Yufei Lu;Binbin Zhang;Wanqi Jie
作为碘化铋家族化合物的一员，Cs3 Bi 2 I9钙钛矿由于不含有毒的铅以及其高的空气和水分稳定性而在光伏器件和辐射探测器中显示出潜在的应用。在这项工作中，我们报告了低温溶剂挥发结晶法生长的Cs3 Bi 2 I9块体晶体。单晶体的形貌为对称性好的六方晶系，沿[00 l]方向沿着呈层状结构。在10 K光致发光光谱中发现了三个与缺陷相关的跃迁（碘取代铋（IBi）到价带顶（VBM），导带底（CBM）到铯取代铋（CsBi 1-/2-），以及CBM到铯取代碘（CsI 1 +/2+）），解离能分别为47.87 meV，45.28 meV和52.01 meV。比较了[001]和[100]方向的各向异性沿着率，其值分别为11.08 GΩ cm和0.77 GΩ cm，这归因于载流子迁移率的差异。第一性原理计算进一步证实了这一点，结果表明，沿着[001]和[100]方向的有效质量分别为3.22me（电子）/2.14me（空穴）和0.327me（电子）/0.946me（空穴）。Cs_3Bi_2 I_9器件对可见光具有快速的光响应，沿着[100]方向的开关比为1.24，比沿沿着[00 l]方向的开关比高15倍。这种光电各向异性决定了在光伏器件和辐射探测器中的潜在应用。
As a member of the bismuth iodide family compounds, Cs3Bi2I9 perovskite shows potential applications in photovoltaic devices and radiation detectors, due to the absence of toxic lead and its high air and moisture stability. In this work, we report Cs3Bi2I9 bulk crystals grown by a low temperature solvent volatilized crystallization method. The morphology of the single crystals exhibits a well symmetric hexagonal shape, with a layered structure along the [00l] direction. Three defect related transitions (iodine substituting bismuth (IBi) to the valence band maximum (VBM), the conduction band minimum (CBM) to caesium substituting bismuth (CsBi1−/2−), and the CBM to caesium substituting iodine (CsI1+/2+)) are identified in 10 K photoluminescence spectra, with dissociation energies of 47.87 meV, 45.28 meV, and 52.01 meV, respectively. The anisotropic resistivities along the [00l] and [l00] directions are compared, with values of 11.08 GΩ cm and 0.77 GΩ cm, respectively, which is attributed to the difference of carrier mobility. This is further certified by the first principles calculations, which demonstrate that the effective masses along the [00l] and [l00] directions are 3.22me (electrons)/2.14me (holes) and 0.327me (electrons)/0.946me (holes), respectively. The Cs3Bi2I9 device exhibits fast photoresponse to optical light, with an on–off ratio of ∼24 along [l00], which is fifteen times higher than that along [00l]. This photoelectric anisotropy dictates the potential applications in photovoltaic devices and radiation detectors.
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影响因子：
3.7
作者：
Sebastian, M.;Peters, J. A.;Wessels, B. W.
通讯作者：
Wessels, B. W.
影响因子：
11.9
作者：
Eperon, Giles E.;Paterno, Giuseppe M.;Snaith, Henry J.
通讯作者：
Snaith, Henry J.
影响因子：
27.8
作者：
Sutton, Rebecca J.;Eperon, Giles E.;Snaith, Henry J.
通讯作者：
Snaith, Henry J.
影响因子：
15
作者：
Lee, Byunghong;Stoumpos, Constantinos C.;Chang, Robert P. H.
通讯作者：
Chang, Robert P. H.
影响因子：
3.7
作者：
Clark, D. J.;Stoumpos, C. C.;Jang, J. I.
通讯作者：
Jang, J. I.