La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature
La-doped EuO: A rare earth ferromagnetic semiconductor with the highest Curie temperature
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DOI：
10.1063/1.3416911
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发表时间：
2010-06-07
影响因子：
4
通讯作者：
Kimura, S.
中科院分区：
文献类型：
--
作者：
Miyazaki, H.;Im, H. J.;Kimura, S.
我们报道了单晶La掺杂EuO薄膜的制备，其居里温度（T-C）约为200 K，是不含过渡金属的稀土化合物中最高的。从第一原理能带计算和X射线衍射测量来看，观察到的T-C增加不能仅用晶格收缩导致的杂化强度增加和电子掺杂导致Eu 5d态的上自旋电子增加来解释。 Eu 4f 和供体态之间的杂交和/或由掺杂的 La 5d 态介导的 Ruderman-Kittel-Kasuya-Yoshida 相互作用是 T-C 增加的可能根源。 (C) 2010 年美国物理研究所。 [号码：10.1063/1.3416911]
We report the fabrication of single-crystalline La-doped EuO thin films with a Curie temperature (T-C) of about 200 K, the highest among rare-earth compounds without transition metals. From first-principle band calculation and x-ray diffraction measurement, the observed increase in T-C cannot be explained only by the increase in hybridization intensity due to lattice contraction and the increase in up-spin electrons of the Eu 5d state caused by the electron doping. Hybridization between the Eu 4f and donor states and/or Ruderman-Kittel-Kasuya-Yoshida interaction mediated by the doped La 5d state is a possible origin of the increase in T-C. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3416911]