Radio-Frequency Reflectometry in Silicon-Based Quantum Dots
Radio-Frequency Reflectometry in Silicon-Based Quantum Dots
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DOI：
10.1103/physrevapplied.16.014057
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发表时间：
2021-07-23
影响因子：
4.6
通讯作者：
Yacoby, A.
中科院分区：
文献类型：
--
作者：
Liu, Y. -Y.;Philips, S. G. J.;Yacoby, A.
射频（rf）反射计为门控量子点的电荷传感和自旋读出提供了一种快速灵敏的方法。在这项工作中，我们专注于在累积模式门定义量子点中实现射频读出，其中较大的寄生电容构成了挑战。我们描述并测试了两种减轻寄生电容影响的方法，一种是通过片内修改，另一种是通过片外更改。我们证明了片上修改可以在Si/SixGe1-x量子点中实现高性能电荷读出，在1 μ s的测量时间内实现99.9%的保真度。
Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 mu s.