Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects
Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects
复制标题
DOI：
10.1109/tns.2013.2261317
复制
发表时间：
2013-06
影响因子：
1.8
通讯作者：
J. Schwank;M. Shaneyfelt;P. Dodd
中科院分区：
文献类型：
--
作者：
J. Schwank;M. Shaneyfelt;P. Dodd
本文档给出了单事件翻转（SEU）、单事件闭锁（SEL）、单事件燃尽（SEB）和单事件栅破裂（SEGR）硬度保证测试的详细测试指南。它包括重离子和质子环境的指导方针。这些指导方针是基于多年来在偏远地点设施进行的试验和我们目前对单一事件效应机制的理解。
This document gives detailed test guidelines for single-event upset (SEU), single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) hardness assurance testing. It includes guidelines for both heavy-ion and proton environments. The guidelines are based on many years of testing at remote site facilities and our present understanding of the mechanisms for single-event effects.