Effect of Domain Boundary on Carrier Transport of Calamitic Liquid Crystalline Photoconductive Materials
Effect of Domain Boundary on Carrier Transport of Calamitic Liquid Crystalline Photoconductive Materials
复制标题
畴界对杆状液晶光电导材料载流子传输的影响
DOI：
10.1080/10587250008023877
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
J. Hanna
中科院分区：
文献类型：
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作者：
Hiroki Maeda;M. Funahashi;J. Hanna
摘要 2-苯基萘衍生物等棒状液晶材料中的近晶中间相表现出快速的双极载流子传输，其迁移率高达10−2 cm2/Vs。对于这些中间相，我们通过测量厚度达 120 μm 的厚电池和 10-100 μm 不同畴尺寸的电池中的瞬态光电流，研究了体中和畴边界处的缺陷对这些载流子传输的影响。发现所有细胞都观察到非色散载流子传输，并且载流子传输既不受细胞厚度的影响，也不受域尺寸的影响。因此，得出的结论是，体中几乎没有深层缺陷，并且这些中间相中的畴边界是电不活跃的，这表明它们在大面积电子器件的实际应用中具有很高的潜力。
Abstract Smectic mesophases in the calamitic liquid crystalline materials such as 2-phenylnaphthalene derivatives exhibit fast ambipolar carrier transport, whose mobility is up to 10−2 cm2/Vs. For these mesophases, we have investigated the effect of defects in the bulk and at the domain boundary on these carrier transport by measuring transient photocurrents in thick cells up to 120 μm in thickness and in the cells of different domain sizes of 10–100s μm. It was found that non-dispersive carrier transports was observed for all the cells and the carrier transport was affected neither by cell thickness nor by domain sizes. Thus, it was concluded that there are few deep defects in the bulk and that the domain boundary is electrically inactive in these mesophases, demonstrating their high potential for practical application to large-area electronic devices.