Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers
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DOI：
10.3390/ma12203293
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发表时间：
2019-10-01
期刊：
影响因子：
3.4
通讯作者：
La Via, Francesco
中科院分区：
文献类型：
--
作者：
Anzalone, Ruggero;Zimbone, Massimo;La Via, Francesco
本文研究了温度对3C-SiC同质外延生长过程的影响。外延层的种子是通过一种基于硅熔化的创新技术获得的：在硅衬底上异质外延生长过程的第一步后，硅熔化，剩余的独立的碳化硅层被用作同质外延生长的种子层。不同的形貌分析表明，生长温度和生长速率对层错密度有重要影响。X射线衍射和显微拉曼分析表明，在同质外延化学气相沉积CVD生长过程中，生长温度、晶体质量和掺杂浓度之间存在着严格的关系。此外，光致发光光谱表明，在高温同质外延过程中，点缺陷显著减少。
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.