Femtosecond laser induced ablation of crystalline silicon upon double beam irradiation
Femtosecond laser induced ablation of crystalline silicon upon double beam irradiation
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DOI：
10.1016/s0169-4332(02)00400-2
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发表时间：
2002-09
影响因子：
6.7
通讯作者：
T. Choi;D. Hwang;C. Grigoropoulos
中科院分区：
文献类型：
--
作者：
T. Choi;D. Hwang;C. Grigoropoulos
超短脉冲激光辐射已被证明是精密材料加工的有效方法。优点包括烧蚀过程的非热性质和较短的热穿透深度。这些都是精密微结构和可控烧蚀的理想特性。晶体硅样品受到两个全宽半高(FWHM)持续时间约为80ps的光学分离的超快激光脉冲的影响。这些脉冲是由固体激光泵浦的钛铝飞秒振荡器在波长λ=800 nm处输出的，振荡器是在再生放大器中播种的。利用飞秒分辨成像泵浦和探测实验研究了样品烧蚀过程中的等离子体动力学和激波传播。
Ultra-short pulsed laser radiation has been shown to be effective for precision materials processing. Advantages include the non-thermal nature of ablation process and short thermal penetration depth. These are ideal characteristics for precision microstructuring and controlled ablation. A crystalline silicon sample is subjected to two optically separated ultra-fast laser pulses of full width half maximum (FWHM) duration of about 80 fs. These pulses are delivered at wavelength λ=800nm by a solid-state laser pumped Ti:Al2O3femtosecond oscillator seeding a regenerative amplifier. Femtosecond-resolved imaging pump-and-probe experiments in reflective and Schlieren configurations have been performed to investigate plasma dynamics and shock wave propagation during the sample ablation process.