Error Correction for Partially Stuck Memory Cells
Error Correction for Partially Stuck Memory Cells
复制标题
部分卡住的存储单元的纠错
DOI：
10.1109/redundancy48165.2019.9003352
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
A. Wachter
中科院分区：
文献类型：
--
作者：
Haider Al Kim;S. Puchinger;A. Wachter
我们提出的代码结构掩蔽u部分卡住的存储单元与q级和纠正额外的随机错误。该结果是通过将[1]中用于卡住单元的掩蔽和纠错的方法与[2]中用于部分卡住单元的仅掩蔽结果相结合来实现的。我们提出了两种构造掩蔽u < q细胞和错误校正：一个是一般的，基于一个特定形式的生成矩阵。第二种构造使用循环码，并且允许使用BCH界限有效地限制纠错能力。此外，我们将结果推广到掩蔽u ≥ q细胞。对于u > 1和q > 2，所有新的构造都需要比先前对卡住单元的工作更少的冗余来掩蔽部分卡住单元，这进而可以在相同的掩蔽和纠错能力下导致更高的码率。
We present code constructions for masking u partially stuck memory cells with q levels and correcting additional random errors. The results are achieved by combining the methods for masking and error correction for stuck cells in [1] with the masking-only results for partially stuck cells in [2]. We present two constructions for masking u < q cells and error correction: one is general and based on a generator matrix of a specific form. The second construction uses cyclic codes and allows to efficiently bound the error-correction capability using the BCH bound. Furthermore, we extend the results to masking u ≥ q cells. For u > 1 and q > 2, all new constructions require less redundancy for masking partially stuck cells than previous work on stuck cells, which in turn can result in higher code rates at the same masking and error correction capability.