Effect of organic spacer in an organic spin valve using organic magnetic semiconductor V[TCNE]x
Effect of organic spacer in an organic spin valve using organic magnetic semiconductor V[TCNE]x
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DOI：
10.1016/j.orgel.2012.03.038
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发表时间：
2012-07
影响因子：
3.2
通讯作者：
Bin Li;Mengqi Zhou;Yu Lu;Chi-yueh Kao;Jung‐Woo Yoo;V. Prigodin;A. Epstein
中科院分区：
文献类型：
--
作者：
Bin Li;Mengqi Zhou;Yu Lu;Chi-yueh Kao;Jung‐Woo Yoo;V. Prigodin;A. Epstein
研究了有机半导体间隔层三（8-羟基喹啉）（Alq 3）在由V[TCNE]x（x ≠ 2，TCNE：四氰基乙烯）和Fe作为铁磁层组成的混合自旋阀中的作用.比较了Fe/V[TCNE]x/Al和Fe/Alq 3/V[TCNE]x/Al两种器件，发现有机隔离层不是自旋阀效应出现的必要条件。然而，具有Alq 3间隔物的器件具有比不具有间隔物的器件大一个数量级的磁阻（MR）值。两种器件的MR都随着温度的升高而减小，而只有Fe/Alq 3/V[TCNE]x/Al器件显示出室温MR。
We studied the role of organic semiconductor spacer tris (8-hydroxyquinoline) (Alq3) in a hybrid spin valve which is comprised of V[TCNE]x(x ∼ 2, TCNE: tetracyanoethylene) and Fe as the ferromagnetic layers. We compare two types of devices: Fe/V[TCNE]x/Al and Fe/Alq3/V[TCNE]x/Al, showing that organic spacer is not indispensable for the appearance of the spin valve effect. However, the device with Alq3spacer has magnetoresistance (MR) value one order of magnitude larger than the device without spacer. The MR of both devices diminish with increasing temperature, while only the Fe/Alq3/V[TCNE]x/Al device shows room-temperature MR.