4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
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DOI：
10.7567/1347-4065/ab0cfa
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发表时间：
2019-04
影响因子：
1.5
通讯作者：
H. Ohta;N. Asai;F. Horikiri;Yoshinobu Narita;Takehiro Yoshida;T. Mishima
中科院分区：
文献类型：
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作者：
H. Ohta;N. Asai;F. Horikiri;Yoshinobu Narita;Takehiro Yoshida;T. Mishima
为了避免高击穿电压的垂直GaN p-n结二极管突然发生灾难性的硬击穿，击穿感生击穿结构被重新考虑。降低了p-GaN层中的镁受主浓度，使穿透击穿发生在硬击穿之前。该二极管采用三层漂移层，p-GaN层的镁离子浓度降低到3×1017 cm−-3，二极管的击穿电压高达4.9kV，抗反向电流突增超过5个数量级。经过15次重复测量后，没有观察到降解。
In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p–n junction diodes, punch-through induced breakdown structures have been newly considered. Mg acceptor concentration in the p-GaN layer was reduced so that the punch-through breakdown occurred before the hard breakdown. By using a wafer with triple drift layers and the p-GaN layer with lowered Mg concentration of 3 × 1017 cm−3 grown on a freestanding n-GaN substrate, the diode showed a high breakdown voltage of 4.9 kV with high reverse avalanche capabilities against sudden increase of reverse current over 5 orders of magnitudes. No degradation was observed after fifteen repetitive measurements.