An innovative mathematical model of RF-induced quiescent point shift in a BJT
An innovative mathematical model of RF-induced quiescent point shift in a BJT
复制标题
DOI：
10.1109/15.536053
复制
发表时间：
1996-08
影响因子：
2.1
通讯作者：
U. Fermi;A. Fiumara;G. Rossi
中科院分区：
文献类型：
--
作者：
U. Fermi;A. Fiumara;G. Rossi
本文描述了双极结型晶体管（BJT）在射频（RF）注入基极引线时的行为。在5-1000 MHz的范围内的计算机模型和测量数据之间的比较结果。在这项工作中，各种偏置网络与不同的基极偏置电阻和不同水平的注入功率被考虑在内。一种新的方法来计算模型的电参数示出，没有直接的知识的物理参数，如掺杂剖面和结的几何尺寸。出于建模目的，结合整流响应的傅立叶展开使用两部分混合/spl pi/模型。一个很好的协议之间的测量数据和模型数据。
This paper describes the bipolar junction transistor (BJT) behavior under radio frequency (RF) injection in its base lead. Comparative results between a computer model and measured data over the range 5-1000 MHz are presented. In this work, various bias networks with different base bias resistors and various levels of injected power were taken into account. A new method to calculate the model electrical parameters is shown, without the direct knowledge of physical parameters such as doping profiles and geometrical dimensions of the junctions. For modeling purposes, a two-section hybrid /spl pi/ model was used in conjunction with a Fourier expansion of the rectification response. A good agreement was found between the measured data and model data.