Proton induced damage in SiC light emitting diodes
Proton induced damage in SiC light emitting diodes
复制标题
SiC 发光二极管中的质子诱导损伤
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
J. Vincent
中科院分区：
文献类型：
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作者：
P. Hinrichsen;A. Houdayer;A. L. Barry;J. Vincent
人们已经研究了使用 SiC LED（发光二极管）作为空间和其他应用的 NIEL（非电离能量损失）监视器的可能性。质子能量在 2.0 至 500 MeV 之间时，测量了质子照射对“蓝色”SiC LED 的响应时间和发光强度的影响。将根据响应时间衰减定义的损伤常数 K/sub /spl tau//(E/sub p/) 和根据光输出减少定义的 K/sub L/(E/sub p/) 的变化与 NIEL 和相对论弹性散射截面的计算结果进行比较。
The possible use of SiC LEDs (light emitting diodes) as NIEL (Non Ionizing Energy Loss) monitors for space and other applications has been investigated. The effects of proton irradiation on both the response time and the intensity of the light emitted by "blue" SiC LEDs have been measured for proton energies between 2.0 and 500 MeV. Variation of the damage constants K/sub /spl tau//(E/sub p/), defined in terms of the response time decrement, and K/sub L/(E/sub p/), defined in terms of the decrease in light output, are compared with calculations of NIEL and the Relativistic Elastic scattering cross section.