Properties of diamond-like carbon films prepared by high power pulsed sputtering with two facing targets

Properties of diamond-like carbon films prepared by high power pulsed sputtering with two facing targets
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DOI:
10.1016/j.surfcoat.2016.07.030
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发表时间:
2016-12
影响因子:
5.4
通讯作者:
T. Kimura;T. Mishima;K. Azuma;S. Nakao
T. Kimura;T. Mishima;K. Azuma;S. Nakao
中科院分区:
材料科学1区
文献类型:
--
作者:
T. Kimura;T. Mishima;K. Azuma;S. Nakao

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采用高功率脉冲溅射技术,采用两对靶结构制备了类金刚石薄膜。这种放电称为潘宁放电。虽然等离子体的平均功率为36-38 W,但在紧凑空间中消耗的瞬时功率峰值超过10 kW。在0.5 ~ 2 Pa的压力范围内,生长速率为0.16-0.2 μm/h。在拉曼光谱中,在1200和1700 cm-1之间延伸的两个非常宽的重叠带被指定为D(无序)和G(石墨)带。在小于1 Pa的压力下,D带与G带的强度比和G峰位置对压力的依赖性不强,超过1 Pa,G峰位置向高波数方向移动,强度比增大。同时,G峰的半峰全宽随着压力的增加而单调减小。在XPS C1 s芯能级谱中,当压力低于1 Pa时,sp 3C键相关面积的比率约为43-44%,当压力超过1 Pa时,随着压力的增加,sp 3C键相关面积的比率逐渐降低到38%左右。压力对sp 3C键速率的依赖性与拉曼参数的分析相当一致。当压力小于1 Pa时,薄膜的硬度超过25 GPa,而当压力大于1 Pa时,薄膜的硬度为16.5GPa。
Diamond-like carbon films are prepared by high power pulsed sputtering with a configuration of two facing targets. The discharge is called Penning discharge. Peak value of instantaneous power which is consumed in the plasma confined in a compact space reaches more than 10 kW in spite of an average power of 36–38 W. Growth rate is around 0.16–0.2 μm per hour in the pressure range from 0.5 to 2 Pa. In the Raman spectra, two very broad overlapping bands extending between 1200 and 1700 cm− 1are assigned as the D (disorder) and G (graphite) bands. Both the intensity ratio of D band to G band and the G peak position do not strongly depend on the pressure at the pressure less than 1 Pa, beyond which the G peak position somewhat shifts to higher wavenumber and the intensity ratio increases. Meanwhile, the full width at half maximum of the G peak monotonically decreases with increasing pressure. In XPS C1s core level spectra, the rate of sp3C bond related area is about 43–44% at the pressure lower than 1 Pa, beyond which the rate gradually decreases to about 38% with increasing pressure up to 2 Pa. The pressure dependence on the rate of sp3C bond is reasonably consistent with the analysis of the Raman parameters. The hardness of films exceeds 25 GPa at the pressure less than 1 Pa, whereas the films with a moderate hardness of about 16.5 GPa are prepared at the pressure higher than 1 Pa.