Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films
Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films
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DOI：
10.1063/1.3641983
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发表时间：
2011-09
影响因子：
3.2
通讯作者：
Xihong Hao;Zhenxing Yue;Jinbao Xu;S. An;C. Nan
中科院分区：
文献类型：
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作者：
Xihong Hao;Zhenxing Yue;Jinbao Xu;S. An;C. Nan
采用溶胶-凝胶法在Pt缓冲硅衬底上制备了厚度约为1.7 μm的（100）取向Pb 0.97La 0.02（Zr 0.95Ti 0.05）O3（PLZT）反铁电薄膜。在1 kHz ~ 1 MHz的频率范围内，薄膜的室温电容密度大于195 nF/cm 2。可恢复能量密度随测量场的增大而增大，在室温下1120 kV/cm时可获得最大值12.4 J/cm ~ 3。从温度相关的电场诱导极化滞后回线中，在相变温度附近获得了最大可逆绝热温度变化ΔT = 8.5 °C。
(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric films with a thickness of about 1.7 μm were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm2 over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm3 at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, ΔT = 8.5 °C, was obtained near the phase-transition temperature.