A novel low noise IMPATT diode
A novel low noise IMPATT diode
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DOI：
10.1109/16.817586
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发表时间：
2000
影响因子：
3.1
通讯作者：
D. Herbert;R. Davies
中科院分区：
文献类型：
--
作者：
D. Herbert;R. Davies
崩越二极管目前是较高毫米波频率下的主要固态功率源，但可能遭受高噪声水平、低效率和低可靠性，特别是在驱动高功率时。本文提出了一种新的概念，它可以产生基本上无噪声的雪崩倍增在高频率，并应提高效率和可靠性。所提出的结构需要一层窄间隙材料邻近宽间隙雪崩区。
IMPATT diodes are currently the main solid state source of power at the higher millimeter-wave frequencies, but can suffer from high noise levels, low efficiency and low reliability, particularly when driven for high power. In the present paper a new concept is proposed which can yield essentially noise free avalanche multiplication at high frequency and should improve both efficiency and reliability. The proposed structures require a layer of narrow gap material adjacent to a wide gap avalanche zone.