Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy
Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy
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激光分子束外延同质外延 (1 0 0) GaAs 的表面化学和生长机制研究
DOI：
10.1016/j.apsusc.2011.09.094
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发表时间：
2011
影响因子：
6.7
通讯作者：
Minjie Zhou
中科院分区：
文献类型：
--
作者：
D. Yan;Weidong Wu;Hong Zhang;Xuemin Wang;Hongliang Zhang;Weibin Zhang;Zhengwei Xiong;Yuying Wang;Shen Changle;Liping Peng;Shang;Minjie Zhou
本文采用激光分子束外延技术在热脱附的（100）GaAs衬底上沉积了GaAs薄膜。扫描电子显微镜，原位反射高能电子衍射和原位X射线光电子能谱被应用于生长过程中的表面形貌和化学的评价。结果表明，热处理后的GaAs衬底表面形成了高密度的凹坑，外延薄膜以台阶流动生长的方式自愈，表面形貌更加平整。此外，它被发现，纳入砷物种到GaAs外延层是更有效的激光分子束外延比传统的分子束外延。我们认为热处理后的GaAs衬底的表面化学和形貌对生长过程有影响，并详细讨论了其生长机理。
In this paper, GaAs thin film has been deposited on thermally desorbed (100) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.