Decreased oxygen vacancies and improved ferroelectric properties of the BiFeO3 thin films with high magnetic field annealing
Decreased oxygen vacancies and improved ferroelectric properties of the BiFeO3 thin films with high magnetic field annealing
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DOI：
10.1016/j.jallcom.2016.11.144
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发表时间：
2017-02
影响因子：
6.2
通讯作者：
Xianwu Tang;L. Jin;J. Dai;Xuebin Zhu;Yuping Sun
中科院分区：
文献类型：
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作者：
Xianwu Tang;L. Jin;J. Dai;Xuebin Zhu;Yuping Sun
研究了强磁场退火对化学溶液沉积（CSD）法在ITO玻璃衬底上制备的BiFeO 3（BFO）多晶薄膜的影响。磁场诱导的磁力使薄膜晶粒尺寸增大，界面运动激活能降低，特别是低温退火薄膜。随着磁场强度的增加，BFO薄膜中Fe ~（3+）离子的含量增加，自由能降低，氧空位减少，漏电流密度降低。初始磁场增加时，由于氧空位和晶界的减少导致畴壁钉扎减少，从而使回复极化增加，矫顽场减小。总体而言，降低的介电常数和改善的铁电极化表明，高MFA是一种有效的方式来提高CSD衍生的BiFeO 3薄膜的铁电性能。
High magnetic field annealing (MFA) effects on polycrystalline BiFeO3(BFO) thin films deposited on ITO buffered glass substrates by the chemical solution deposition (CSD) method have been investigated. Magnetic force induced by magnetic field leads to the increased crystallite size and the decrease in activation energy for boundary motion, especially for the low temperature annealed films. More Fe3+ions are induced with increasing magnetic field to lower the free energy of the BFO films, which also leads to a decreased oxygen vacancy, resulting in low leakage current density. The increased remanent polarization and the decreased coercive field initially with the increase in magnetic field are attributed to the reduced domain wall pinning resulted from decreased oxygen vacancies and grain boundaries. Generally, the decreased coercivity and the improved ferroelectric polarization suggest high MFA is an effective way to enhance ferroelectric properties of the CSD-derived BiFeO3thin films.