Investigation of grain formation and growth in nickel-induced lateral crystallization process
Investigation of grain formation and growth in nickel-induced lateral crystallization process
复制标题
镍诱导横向结晶过程中晶粒形成和生长的研究
DOI：
10.1063/1.1513881
复制
发表时间：
2002
影响因子：
3.2
通讯作者：
M. Qin
中科院分区：
文献类型：
--
作者：
C. Y. Yuen;M. Poon;W. Y. Chan;M. Qin
本文提出了一种简单的方法来揭示镍诱导横向结晶（NILC）中晶粒的生长方向。该方法使用6000 A非晶硅膜作为起始层，然后用镍结晶。 然后用硅干法刻蚀的方法对晶粒进行了刻划，清晰地显示了NILC中晶粒的生长情况。结果表明，晶粒生长的方向性和均匀性与镍源的相对位置和形状密切相关。光学显微镜观察表明，晶粒形成为三角形。该结构条件是由用于扫描晶粒的原子力显微镜确认的。提出了与硅化镍链运动有关的晶粒长大机制。比较了在晶化区不同位置上制作的n沟道金属氧化物半导体晶体管的性能，发现这种晶粒显示方法所显示的晶粒生长方向性与晶体管的生长方向性是一致的。
In this article a simple method to reveal the direction of grain growth in nickel-induced lateral crystallization (NILC) is demonstrated. This method uses 6000 A amorphous silicon film as the starting layer which is then crystallized by nickel. Then silicon dry etching is used to delineate the grains and the condition of grain growth in NILC is clearly shown. It is found that the grain growth directionality and uniformity are greatly dependent on the relative position and the shape of the nickel source origin. The optical microscope shows that the grain formation is in triangular shape. The structural condition is confirmed by an atomic force microscope which is used to scan over the grain. A mechanism of grain growth related to the movement of nickel silicide chains is proposed. Performances of n-channel metal–oxide–semiconductor transistors fabricated on different positions of the crystallized region are compared and it is found that the grain growth directionality shown after this grain-revealing metho...