Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation
Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation
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DOI：
10.1103/physrevb.64.245413
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发表时间：
2000-04
影响因子：
8.6
通讯作者：
Jiang;Jia
中科院分区：
文献类型：
--
作者：
Jiang;Jia
在硅衬底上的直接金刚石外延不仅表现在生长过程中形成的界面处，而且还表现在成核位点处。由于硅表面的粗糙化，在成核处形成了尺寸为几个原子距离的小（001）台阶，导致了晶粒的取向不良。提出了一个模型，试图解释金刚石生长的初始阶段。预测了提高外延金刚石微晶成核的方法。
A direct diamond epitaxy on the silicon substrate is demonstrated not only at the interface formed during the growth process but also at the nucleation sites. The small (001) terraces with dimensions of several atomic distances at the site of nucleation are formed due to the roughening of silicon surface and lead to the grain misorientation. A model is presented which attempts to explain the initial stages of diamond growth. Predictions are made for methods of improving the nucleation of epitaxial diamond crystallites.