Conformal, low-damage shallow junction technology (Xj∼5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node
Conformal, low-damage shallow junction technology (Xj∼5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node
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共形、低损伤浅结技术 (Xj~5nm)，具有优化 FinFET 触点，作为 14nm 节点以上的解决方案
DOI：
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发表时间：
2012
期刊：
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通讯作者：
R. Jammy
中科院分区：
文献类型：
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作者：
I. Ok;K. Ang;C. Hobbs;R. Baek;C. Kang;J. Snow;P. Nunan;S. Nadahara;P. Kirsch;R. Jammy
在FinFET上实现了一种新的无损伤共形掺杂技术(单层掺杂，MLD)，它可以很好地控制短沟道效应，栅长可达~40 nm，Wfin的栅长可达20 nm。与传统的离子注入方法不同，该方法利用掺杂前驱体均匀组装一层共价键合的单层掺杂剂，实现了约5 nm的超浅结，显示出极大的FinFET结尺度的潜力。这种低损伤、共形掺杂技术有望解决FinFET的关键缩放问题：14 nm及以上节点的串联电阻和短沟道控制。在300 mm平台上成功地实现了结深小于5 nm的陡峭结突度。
A new conformal and damage free doping technique (monolayer doping, MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of ~40nm and 20nm of Wfin. Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable ultra-shallow junction (USJ) of ~5nm, showing great potential for FinFET junction scaling. This low damage, conformal doping technique is promising to address key FinFET scaling issues: series resistance and short channel control for 14nm node and beyond. A sub-5nm junction depth with a steep junction abruptness has been successfully achieved on 300mm platform.