Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates respectively by plasma-assisted molecular-beam epitaxy
Comparison of resonant tunneling diodes grown on freestanding GaN substrates and sapphire substrates respectively by plasma-assisted molecular-beam epitaxy
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等离子体辅助分子束外延分别在独立式 GaN 衬底和蓝宝石衬底上生长的谐振隧道二极管的比较
DOI：
10.1088/1674-1056/ac0525
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发表时间：
2021-05
影响因子：
1.7
通讯作者：
Hua Qin
中科院分区：
文献类型：
--
作者：
Xiang-Peng Zhou;Hai-Bing Qiu;Wenxian Yang;Shulong Lu;Xingwang Zhang;Shan Jin;Xuefei Li;Lifeng Bian;Hua Qin
采用等离子体辅助分子束外延（PA-MBE）技术分别在独立GaN（FS-GaN）衬底和蓝宝石衬底上生长了AlN/GaN共振隧穿二极管（RTD）。在正向偏压下，FS-GaN衬底上生长的RTD获得了室温负微分电阻（NDR），峰值电流密度（Jp）为175-700 kA/cm 2，峰谷电流比（PVCRs）为1.01 ~ 1.21。在室温下，一些RTD也观察到两个共振峰。首次系统研究了两种衬底对GaN基RTD外延质量和器件性能的影响，发现较低的位错密度、较平坦的表面形貌和较陡的异质界面是实现RTD负阻的关键因素。
AlN/GaN resonant tunneling diodes (RTDs) were grown separately on freestanding GaN (FS-GaN) substrates and sapphire substrates by plasma-assisted molecular-beam epitaxy (PA-MBE). Room temperature negative differential resistance (NDR) was obtained under forward bias for the RTDs grown on FS-GaN substrates, with the peak current densities (J p) of 175–700 kA/cm 2 and peak-to-valley current ratios (PVCRs) of 1.01–1.21. Two resonant peaks were also observed for some RTDs at room temperature. The effects of two types of substrates on epitaxy quality and device performance of GaN-based RTDs were firstly investigated systematically, showing that lower dislocation densities, flatter surface morphology, and steeper heterogeneous interfaces were the key factors to achieving NDR for RTDs.