SiC MOSFET Threshold-Voltage Instability Under High Temperature Aging
SiC MOSFET Threshold-Voltage Instability Under High Temperature Aging
复制标题
SiC MOSFET 高温老化下阈值电压不稳定性
DOI：
10.1109/icept.2018.8480781
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Guoqi Zhang
中科院分区：
文献类型：
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作者：
Yang Liu;Xianping Chen;Zhaohui Zhao;Zhigang Li;C. Lu;Jingguo Zhang;H. Ye;S. Koh;Ligen Wang;Guoqi Zhang
A systematic study of discrete SiC MOSFETs’ reliability under High Temperature stress has been carried out. High Temperature stress is performed in this work to characterize the threshold voltage instability. To investigate the degradation mechanism of devices, simulation according to the structure of MOSFET cell has been performed. The result shows that the threshold voltages change trends of both MOSFETs are the same, including drop-down period at very early time due to a decrease of doping concentration at channel region and gradual raise-up period at in the rest of time resulting from decline of interface charge.
