Configurationally multistable defect in silicon
Configurationally multistable defect in silicon
复制标题
硅中的构型多稳态缺陷
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
L. Kimerling
中科院分区：
文献类型：
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作者：
A. Chantre;L. Kimerling
我们报告了室温电子辐照后 n 型硅中新缺陷的分离。使用深能级瞬态光谱 (DLTS) 与 250 K 下的少数载流子注入相结合，我们发现通常归因于磷空位对的 DLTS 峰隐藏了由于其稳定构型中的这种缺陷而产生的信号。我们发现该缺陷可能存在于其他三种配置中，可以通过 DLTS 单独研究这些配置。据推测，该缺陷涉及晶格空位和磷原子，以及第三个未识别的缺陷或杂质。
We report the isolation of a new defect in n‐type silicon following room‐temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority‐carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus‐vacancy pair hides a signal arising from this defect in its stable configuration. We find that the defect can exist in three other configurations which can be individually studied by DLTS. It is proposed that this defect involves a lattice vacancy and a phosphorus atom, plus a third unidentified defect or impurity.